"ddr4 sodimm 32gb"

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT32G4SFD832A

(10)

• CAS Latency: CL22
• Voltage: 1.20V
• Model #: SU032GBSFU320X22SN

(57)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4SFD824A

• Brand: PNY
• Capacity: 32GB (2 x 16GB)
• Type: 260-Pin DDR4 SO-DIMM
• Speed: DDR4 3200 (PC4 25600)
• Model #: MN32GK2D43200-TB

(170)

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4SFD8266

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: HMAA4GS6MJR8N -VK

• Model #: 4X71D09536

• Brand: PNY
• Capacity: 64GB (2 x 32GB)
• Type: 260-Pin DDR4 SO-DIMM
• Speed: DDR4 3200 (PC4 25600)
• Model #: MN64GK2D43200-TB

(325)

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4SFRA266

• CAS Latency: CL22
• Timing: 22-22-22
• Model #: AD4S320032G22-SGN

• CAS Latency: CL22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: 2RX8
• Model #: KCP432SD8/32

(7)

• CAS Latency: CL15
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: CT2K16G4SFD8213

(325)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4SFRA32A

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: KF432S20IBK2/64

(1,720)

• CAS Latency: CL22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: F4-3200C22D-32GRS

(1,720)

• CAS Latency: CL16
• Timing: 16-16-16-39
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: F4-2400C16D-32GRS

(1,720)

• CAS Latency: CL19
• Timing: 19-19-19-43
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: F4-2666C19D-32GRS

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered / Unregistered
• Model #: MN32GK2D43200X

(2)

• Voltage: 1.20V
• Model #: M471A4G43MB1-CTD

(460)

• CAS Latency: CL22
• Timing: 22-22-22-53
• Voltage: 1.20V
• Features: 32GB (2x16GB) DDR4 SODIMM kit for 8th Generation or newer Intel Core i7, and AMD Ryzen 4000 Seires notebooks 3200MHz 22-22-22-53 latency 1.2V Auto-overclocking with compatible notebooks (no BIOS configuration required)
• Model #: CMSX32GX4M2A3200C22

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: HMAA4GS6MJR8N-VK

(1)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds start at 2133 MT/s Increase bandwidth by up to 30% Reduce power consumption by up to 40% and extend battery life Faster burst access speeds for improved sequential data throughput Optimized for next generation processors and platforms Available in modules up to 8GB and kits up to 32GB
• Model #: CT2K4G4SFS624A

• Model #: MES4S266KF4G

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds start at 2133 MT/s Increase bandwidth by up to 30% Reduce power consumption by up to 40% and extend battery life Faster burst access speeds for improved sequential data throughput Optimized for next generation processors and platforms Available in modules up to 8GB and kits up to 32GB
• Model #: CT4G4SFS624A

(48)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFD824A

(3)

• CAS Latency: CL46
• Voltage: 1.10V
• Features: 5600MT/s grants faster transmission speeds and higher bandwidth than DDR4 1.5x faster than standard 3200MT/s DDR4 to provide multi-core CPUs with extreme responsiveness Available in 8GB, 16GB, and 32GB module densities Doubled chip unit capacity compared to DDR4 (from 16GB to 32GB) for seamless multi-tasking Low voltage of 1.1V for less power consumption Improved reliability versus DDR4 with On-Die Error Correction Code (ECC) Optimized efficiency with two independent 32-bit channels per module High computing performance with double the banks and double the burst length compared to DDR4 Compatible with 13th Gen Intel Cor™ processors that support DDR5 and DDR5 compatible motherboards
• Model #: SU032GBSVU560F22SN

• Model #: 4X71A11993

• CAS Latency: CL22
• Buffered/Registered: Unbuffered / Unregistered
• Model #: M471A2K43EB1-CWE

(460)

OUT OF STOCK

• CAS Latency: CL18
• Timing: 18-18-18-43
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CMSX32GX4M1A2666C18

OUT OF STOCK

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: KVR32S22D8/32

OUT OF STOCK

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Recommend Use: AMD & Intel Compatible / AMD Ryzen Compatible / High Performance or Gaming Memory / Intel Compatible
• Model #: KF432S20IB/32

OUT OF STOCK

• CAS Latency: CL20
• Voltage: 1.2 V
• Model #: KF432S20IBK2/32

OUT OF STOCK

• CAS Latency: CL22
• Voltage: 1.20V
• Features: Axiom's DDR4 Modules use the latest evolutionary DRAM design, provides improved speed, power management and reliability. The release of DDR4 delivers an overall performance improvement of up to 30% for single DIMM configurations. DDR4 performance scales up to 65% faster in 3-DIMM per channel (3DPC) applications over DDR3. High bandwidth and faster data rates combined with lower voltage demands deliver the most compelling and significant DRAM computing update in the past decade. DDR4 Features: 100% Increase in speed - Faster Data Rate equates to more responsive application loads on data-intensive programs. 300% increase in component densities - Equals larger modules for next-generation performance demands. 20% decrease in power consumption - Less power consumed means less wasted resources to cool systems ...
• Model #: AB175259-AX

OUT OF STOCK

• CAS Latency: CL22
• Voltage: 1.20V
• Option: Standard Edition
• Model #: KCP432SD832

OUT OF STOCK

• Model #: 4X71A11993-AX

OUT OF STOCK

• Model #: 4VN08AA-AX