"12 gb ram ddr4 leptop"

(465)

• CAS Latency: CL18
• Timing: 18-19-19-39
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CMSX32GX4M2A2666C18

(465)

• CAS Latency: CL22
• Timing: 22-22-22-53
• Voltage: 1.20V
• Features: 32GB (2x16GB) DDR4 SODIMM kit for 8th Generation or newer Intel Core i7, and AMD Ryzen 4000 Seires notebooks 3200MHz 22-22-22-53 latency 1.2V Auto-overclocking with compatible notebooks (no BIOS configuration required)
• Model #: CMSX32GX4M2A3200C22

(465)

• CAS Latency: CL18
• Timing: 18-19-19-39
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CMSX16GX4M2A2666C18

(465)

• CAS Latency: CL22
• Timing: 22-22-22-53
• Voltage: 1.20V
• Model #: CMSX16GX4M1A3200C22

• Model #: YC5KU05200565

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K32G4SFD832A

(3)

• CAS Latency: CL19
• Timing: 19-19-19-43
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: F4-2666C19S-32GRS

(130)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-20-20-38
• Recommend Use: AMD 300 Series / AMD 400 Series / AMD 500 Series / AMD X570 / Intel 300 Series / Intel 400 Series / Intel 500 Series / Intel X299 / Intel 600 Series
• Model #: CMK16GX4M2E3200C16

(1,724)

Saving $150 w/ purchase Laptop combo, limited offer

• CAS Latency: CL22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Multi-channel Kit: Dual Channel Kit
• Model #: F4-3200C22D-32GRS

• CAS Latency: CL20
• Timing: 20-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered / Unregistered
• Model #: MN32GK2D43200X

(1,724)

• CAS Latency: CL22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: Optimized Compatibility with 10th / 11th Gen Intel Core Processors
• Model #: F4-3200C22S-16GRS

(749)

• CAS Latency: CL16
• Voltage: 1.35V
• Timing: 16-18-18-36
• Recommend Use: AMD 300 Series / AMD 400 Series / AMD X570 / Intel 200 Series / Intel 300 Series / Intel 400 Series / Intel X299 / AMD 500 Series / Intel 500 Series / Intel 600 Series
• Model #: CMK16GX4M2B3200C16

• CAS Latency: CL22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Model #: KVR32S22S8/8

• Brand: PNY
• Capacity: 32GB (2 x 16GB)
• Type: 260-Pin DDR4 SO-DIMM
• Speed: DDR4 3200 (PC4 25600)
• Model #: MN32GK2D43200-TB

(235)

• CAS Latency: CL22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED416G3200C22-S01

(3)

• CAS Latency: CL19
• Timing: 19-19-19-43
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: F4-2666C19D-64GRS

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFD832A

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K8G4SFS832A

(172)

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds up to 3200 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 30% Reduce Power consumption by up to 40% and extend battery life Faster burst access speeds for improved sequential data throughput Optimized for next Generation Processors and Platforms
• Model #: CT4G4SFS8266

(7)

• CAS Latency: CL15
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: CT2K16G4SFD8213

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: KVR32S22D8/32

(465)

• CAS Latency: CL40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Model #: CMSX64GX5M2A4800C40

(465)

• CAS Latency: CL40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Model #: CMSX32GX5M2A4800C40

(465)

• CAS Latency: CL40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Model #: CMSX32GX5M1A4800C40

(329)

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFRA266

(465)

• CAS Latency: CL40
• Timing: 40-40-40-77
• Voltage: 1.10V
• Heat Spreader: Yes
• Model #: CMSX16GX5M2A4800C40

• CAS Latency: CL17
• Voltage: 1.20V
• Multi-channel Kit: Quad Channel Kit
• Buffered/Registered: Unbuffered
• Model #: CT4K16G4DFD824A

(134)

• CAS Latency: CL19
• Voltage: 1.2V
• Buffered/Registered: Unbuffered
• Features: Speeds up to 2666 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 32% Reduce power consumption by up to 40% Faster burst access speeds for improved sequential data throughout Optimized for next generation processors and platforms
• Model #: CT2K8G4DFRA266

(7)

• CAS Latency: CL15
• Voltage: 1.20V
• Multi-channel Kit: Quad Channel Kit
• Chipset: Micron Chipset
• Model #: CT16G4DFD8213

(117)

• CAS Latency: CL22
• Timing: 22-22-22
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFS832A

(16)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• BIOS/Performance Profile: Intel XMP 2.0
• Model #: CT2K16G4DFD824A

• CAS Latency: CL15
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Color: Green
• Model #: SKUDM00116

• Model #: CP16G4DFRA32A

Limited time offer, ends 05/25

• Part Number: KS3600D4R13508G-Silver
• CAS Latency: CL18
• Multi-channel Kit: Dual Channel Kit
• BIOS/Performance Profile: XMP 2.0
• Model #: KS3600D4R13508GS

(235)

• CAS Latency: CL22
• Timing: 22-22-22-52
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED48G3200C22-S01