Features: JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
VDDQ = 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm +/- 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB : Height 1.180" (30.00mm), single sided component
Features: Memory Size: 2 GBMemory Technology: DDR3 SDRAMMemory Voltage: 1.50 VMemory Speed: 1600 MHzError Checking: Non-ECCSignal Processing: UnbufferedCAS Latency: CL11Number of Pins: 204-pinForm Factor: SoDIMMWidth: 1.2" (30 mm)Length: 2.7" (67.6 mm)Compatibility: ASUS/ASmobile - A Series Notebook A43E ASUS/ASmobile - A Series Notebook A43SA ASUS/ASmobile - A Series Notebook A43SD ASUS/ASmobile - A Series Notebook A43SJ ASUS/ASmobile - A Series Notebook A43SM ASUS/ASmobile - A Series Notebook A43SV ASUS/ASmobile - A Series Notebook A53E ASUS/ASmobile - A Series Notebook A53SD ASUS/ASmobile - A Series Notebook A53SJ ASUS/ASmobile - A Series Notebook A53SM ASUS/ASmobile - A Series Notebook A53SV ASUS/ASmobile - A Series Notebook A53U ASUS/ASmobile - A Series Notebook A54C ASUS/ASmobile - A Series Notebook A73SV ASUS/ASmo...
Features: 2 Rank Double-sided module
7.8US Refresh Interval (8192 CYCLES/64MS)
1.5V Power Requirement
Auto and self refresh capability
PCB height: 1181(mil)
Serial Presence-Detect (SPD)
100% Tested
RoHS Compliant
JEDEC Compliant
Only compatible with systems based on the 2nd Generation Intel Core CPUs (Intel 2000 Series)
Features: JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power SupplyVDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)800 MHz fCK for 1600 Mb/sec/pin8 independent internal banksProgrammable CAS Latency: 11, 10, 9, 8, 7, 6Programmable Additive Latency: 0, CL-2, or CL-1 clock8-bit pre-fetchBurst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]Bi-directional Differential Data StrobeInternal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm +/- 1%)On Die Termination using ODT pinAsynchronous ResetPCB: Height 1.18" (30mm), double sided component MEM_Recommend Use:
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