"ddr4 sodimm 32gb"

(57)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4SFD824A

(170)

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4SFD8266

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: HMAA4GS6MJR8N -VK

(325)

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K16G4SFRA266

(1,720)

• CAS Latency: CL16
• Timing: 16-16-16-39
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: F4-2400C16D-32GRS

(1,720)

• CAS Latency: CL19
• Timing: 19-19-19-43
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: F4-2666C19D-32GRS

(2)

• Voltage: 1.20V
• Model #: M471A4G43MB1-CTD

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: HMAA4GS6MJR8N-VK

(1)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds start at 2133 MT/s Increase bandwidth by up to 30% Reduce power consumption by up to 40% and extend battery life Faster burst access speeds for improved sequential data throughput Optimized for next generation processors and platforms Available in modules up to 8GB and kits up to 32GB
• Model #: CT2K4G4SFS624A

• Model #: MES4S266KF4G

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds start at 2133 MT/s Increase bandwidth by up to 30% Reduce power consumption by up to 40% and extend battery life Faster burst access speeds for improved sequential data throughput Optimized for next generation processors and platforms Available in modules up to 8GB and kits up to 32GB
• Model #: CT4G4SFS624A

(48)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFD824A

• Model #: MES4S266KF8G

• Model #: MRA4S266GHHF32GX2

(18)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Single-Rank x8
• Model #: CT4G4SFS824A

(1)

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds up to 3200 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 30% Reduce Power consumption by up to 40% and extend battery life Faster burst access speeds for improved sequential data throughput Optimized for next Generation Processors and Platforms
• Model #: CT2K4G4SFS6266

• Voltage: 1.20V
• Parts: 5 Years
• Labor: 5 Years
• Model #: QN16GB2400SOK1r2b8-TZSpecificMPN/NE

• Voltage: 1.20V
• Parts: 5 Years
• Labor: 5 Years
• Model #: QN16GB2400SOK0r2b8-TZSpecificMPN/NE

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: HMA851S6CJR6N- UH

(5)

• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: SNPMKYF9C/8G

(77)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT8G4SFS824A

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Speeds up to 3200 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 30% Reduce Power consumption by up to 40% and extend battery life Faster burst access speeds for improved sequential data throughput Optimized for next Generation Processors and Platforms Speeds up to 3200 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 30% Reduce Power consumption by up to 40% and extend battery life Faster burst access speeds for improved sequential data throughput Optimized for next Generation Processors and Platforms
• Model #: CT4G4SFS6266

(30)

• CAS Latency: CL17
• Timing: 17-17-17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT2K8G4SFS824A

(11)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: CT8G4SFD824A is a 8GB Dual Ranked DDR4 Notebook module that operates at speeds up to 2400 MT/s and has a CL17 latency. It is an Unbuffered SODIMM. It conforms to the industry standard DDR4 SODIMM layout of 260 pins and is compatible with systems that take DDR4 2400MT/s SODIMM memory.
• Model #: CT8G4SFD824A

• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: UnbufferedNon-ECC100% Factory Tested at Speed Designed to meet JEDECFree Technical Support
• Option: For iMac Retina 2017, Dell
• Model #: KCP424SD8/16

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Features: Non-ECCUnbuffered100% Factory Tested at Speed Designed to meet JEDECFree Technical Support
• Model #: KVR24S17D8/16

(235)

• CAS Latency: CL19
• Timing: 19-19-19-43
• Voltage: 1.20V
• Features: All new generation product of DRAM module 1.2V memory module Massive 32GB Kit
• Model #: TED48G2666C19-S01

(8)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: HMA81GS6AFR8N

(3)

• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: HMA851S6AFR6N-UH

(1,720)

• CAS Latency: CL16
• Timing: 16-16-16-39
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: F4-2400C16S-8GRS

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: HMA81GS6AFR8N-UHC

(3)

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered / Unregistered
• Model #: M471A2K43BB1-CRC

(12)

• CAS Latency: CL19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: M471A1K43CB1-CTD

• CAS Latency: CL17
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: AD4S240038G17-B

• CAS Latency: CL19
• Timing: 19-19-19
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CT16G4SFS8266

(460)

OUT OF STOCK

• CAS Latency: CL18
• Timing: 18-18-18-43
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: CMSX32GX4M1A2666C18