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SAMSUNG 4GB 204-Pin DDR3 SO-DIMM DDR3L 1600 (PC3L 12800) Laptop Memory Model MV-3T4G3/US
- DDR3L 1600 (PC3L 12800)
- CAS Latency CL11
- 1.35V
Overview
Specs
Reviews (8)
Industry Leading 30nm TechnologyReap the benefits and savings of the best performance-to-power efficiency ratio on the market. By applying industry-leading 30nm technology, Samsung DDR2/DDR3 uses up to 47% less power than 60nm memory.
Faster Speed, Consistent PerformanceSamsung DDR3 brings new levels of performance to notebooks, PCs and servers. Enjoy consistent delivery of 800Mpbs data rate and clock frequencies of 400 to 800Mhz.
Industry Leading 30nm TechnologyReap the benefits and savings of the best performance-to-power efficiency ratio on the market. By applying industry-leading 30nm technology, Samsung DDR2/DDR3 uses up to 47% less power than 60nm memory.
Faster Speed, Consistent PerformanceSamsung DDR3 brings new levels of performance to notebooks, PCs and servers. Enjoy consistent delivery of 800Mpbs data rate and clock frequencies of 400 to 800Mhz.Warranty & Returns
Warranty, Returns, And Additional Information
Warranty
- Limited Warranty period (parts): Lifetime
- Limited Warranty period (labor): Lifetime
- Read full details
Return Policies
- Return for refund within: 30 days
- Return for replacement within: 30 days
- This item is covered by Newegg.ca's Standard Return Policy.
- Read full return policy for details.
Manufacturer Contact Info
- Manufacturer Product Page
- Manufacturer Website
- Support Phone: 1-800-726-7864
- Support Website
- View other products from SAMSUNG
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