"4gb 1rx8 pc3l 12800s"

• Brand: Hynix
• Capacity: 4GB
• Type: 204-Pin DDR3 SO-DIMM
• Speed: DDR3L 1600 (PC3L 12800)
• Model #: HMT451S6BFR8A-PBA

(1)

• Model #: M471B5173BH0-CK0

• Model #: 6901912231

• Model #: ZZL-RNU-ASD1647603

• Model #: HMT451S6MFR8A-PB

• CAS Latency: CL11
• Voltage: 1.35V
• Model #: KVR16LS11/4

(4)

• CAS Latency: CL11
• Voltage: 1.50V
• Multi-channel Kit: Quad Channel Kit
• Chipset: Major Brand Chipset
• Model #: HMT351U6CFR8C-PB

• CAS Latency: CL9
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Multi-channel Kit: Dual Channel Kit
• Model #: LJHN1333N34G*2

(1)

• CAS Latency: CL11
• Voltage: 1.35V
• Model #: ADDS1600W8G11-S

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Features: JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power SupplyVDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)800 MHz fCK for 1600 Mb/sec/pin8 independent internal banksProgrammable CAS Latency: 11, 10, 9, 8, 7, 6Programmable Additive Latency: 0, CL-2, or CL-1 clock8-bit pre-fetchBurst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]Bi-directional Differential Data StrobeInternal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm +/- 1%)On Die Termination using ODT pinAsynchronous ResetPCB: Height 1.18" (30mm), double sided component MEM_Recommend Use:
• Model #: KVR16LS11/8.

• CAS Latency: CL11
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Model #: HMT451U6AFR8C-P B

• CAS Latency: CL11
• Voltage: 1.35V
• Multi-channel Kit: Quad Channel Kit
• Chipset: Micron Chipset
• Model #: MT8KTF51264AZ-1G6P

• CAS Latency: CL11
• Voltage: 1.35V
• Model #: DDR3-1600-8G-NB

• CAS Latency: CL13
• Voltage: 1.35V
• Chipset: Micron Chipset
• Recommend Use: High Performance or Gaming Memory
• Model #: MT8KTF51264AZ-1G9P1

• Model #: cxcx-411

(3)

• CAS Latency: CL11
• Model #: 7-9C01G42BMB8

• CAS Latency: CL15
• Voltage: 1.20V
• Buffered/Registered: Unbuffered
• Model #: HMA41GS6AFR8N -TF

• Model #: MT8KTF51264HZ-1G6E1

(7)

• CAS Latency: CL6
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Chipset: Major Brand Chipset
• Model #: SKUDM0065

(8)

• CAS Latency: CL9
• Voltage: 1.35V
• Multi-channel Kit: Quad Channel Kit
• Chipset: Micron Chipset
• Model #: CT51264BD1339

• Model #: HMT351U6EFR8C-PB

(32)

• CAS Latency: CL11
• Voltage: 1.35V/1.5V
• Buffered/Registered: Unbuffered
• Color: Black
• Model #: CT51264BD160BJ

• CAS Latency: CL11
• Color: Green
• LED Color: None
• Model #: CT51264BD160BJ-YRD

(1)

• CAS Latency: CL13
• Voltage: 1.35V
• Chipset: Micron Chipset
• Buffered/Registered: Unbuffered
• Model #: CT2KIT51264BD186DJ

(1)

• CAS Latency: CL11
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Buffered/Registered: Unbuffered
• Model #: CT2KIT25664BD160B

(13)

• CAS Latency: CL11
• Voltage: 1.35V
• Multi-channel Kit: Dual Channel Kit
• Chipset: Micron Chipset
• Model #: CT2KIT51264BD160B

• CAS Latency: CL11
• Color: Green
• LED Color: None
• Model #: CT2K51264BD160BJ-YRD

• CAS Latency: CL9
• Voltage: 1.50V
• Multi-channel Kit: Dual Channel Kit
• Buffered/Registered: Unbuffered
• Model #: KVR1333D3N9K2/4G

• CAS Latency: CL11
• Color: Green
• LED Color: None
• Model #: 2KIT51264BA160B

• CAS Latency: CL11
• Color: Green
• LED Color: None
• Model #: 2K51264BD160BJ

• CAS Latency: CL11
• Model #: 4328493918

(1)

• CAS Latency: CL11
• Model #: 0117-7C01MRC4P5Y

• CAS Latency: CL11
• Voltage: 1.50V
• Buffered/Registered: Unbuffered
• Model #: MT8JTF51264AZ.1G6EA

• Voltage: 1.50V
• CAS Latency: CL15
• Type: 240-Pin DDR3 SDRAM
• Rank: 2Rx8
• Model #: MG345

(4)

• CAS Latency: CL11
• Voltage: 1.50V
• Chipset: Samsung Chipset
• Buffered/Registered: Unbuffered
• Model #: M378B5173DB0-CK0

OUT OF STOCK

• CAS Latency: CL11
• Voltage: 1.35V
• Buffered/Registered: Unbuffered
• Model #: KCP3L16SS8/4