Lexar NM610 M.2 2280 500GB PCI-Express 3.0 x 4, NEW NVMe 3D TLC Internal Solid State Drive (SSD) LNM610-500RB

Elevate your PC's performance with faster speed and more efficiency:
Designed to elevate your PC experience with faster load times and transfer speeds from boot-up to shut down, the Lexar NM610 M.2 2280 PCIe Gen3x4 NVMe Solid-State Drive (SSD) will put you in the computing fast lane with speeds up 2100MB/s read and 1600MB/s1 write. It is supported by the PCIe Gen3x4 NVMe 1.3 technology standard and built with the latest 3D NAND flash.

PCIe Gen3x4 NVMe - The upgrade that puts in 3.5x the work:
Move beyond the pace of a SATA SSD's with an upgrade to the Lexar NM610 and get 3.5x the speed of SATA-based SSD3. With PCIe Gen3x4 NVMe 1.3 standard, and speeds up to 2100MB/s read and 1600MB/s write, you will feel the improved performance from boot-ups, software load times, and transfers giving you maximum efficiency without the constant slowdowns. The NM610 is built with 3D NAND flash inside.

Ideal for PC enthusiast:
With sequential read speeds of up to 2100MB/s and sequential write speeds of up to 1600MB/s1, you will enjoy better all-around performance for your PC. That is faster boot-ups, data transfers and application load times compared to a SATA SSD3.

Built to last:
Unlike traditional hard disk drives, the NM610 has no moving parts, so it's less likely to fail. On top of that, it is also shock and vibration resistant2, making it one robust and reliable SSD.

Efficient:
Reduced power consumption and cooler operation makes the battery life last longer than an HDD.

Rigorously tested:
All Lexar product designs undergo extensive testing in the Lexar Quality Labs, facilities with more than 1,100 digital devices, to ensure performance, quality, compatibility, and reliability.

Speed:
250GB sequential read up to 2000MB/s read, sequential write up to 1200MB/s1
IOPS: up to 110/151K
500GB sequential read up to 2100MB/s read, sequential write up to1600MB/s1
IOPS: up to 188/156K
1TB sequential read up to 2100MB/s read, sequential write up to1600MB/s1
IOPS: up to 188/156K

Notes:
1 Up to 2100MB/s read transfer, write transfer speeds lower. Speeds based on internal testing. Actual performance may vary.
2 Comparison based on internal testing. Actual performance may vary.
3 Shock resistant (1500G, duration 0.5ms, Half Sine Wave) and vibration resistant (10~2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis(X,Y,Z)). Based on internal testing. Actual performance may vary.

Operating Temperature: 0 ~ 70 Celsius Degree(32F to 158F)
Storage Temperature: -40 ~ 85 Celcius Degree(-40F to 185F)
Shock Resistant: 1500G, duration 0.5ms, Half Sine Wave
Vibration Resistant: 10~2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis(X,Y,Z)

TBW: 250GB: 125TB, 500GB: 250TB, 1TB: 500TB
DWPD: 250GB: 0.46, 500GB: 0.46, 1TB: 0.46
MTBF: 1,500,000 Hours
Dimension (L x W x H): 80mm x 22mm x 2.25mm / 3.15" x 0.87" x 0.09"
Weight: 9g